FCP165N65S3
Manufacturer:
On Semiconductor
Mfr.Part #:
FCP165N65S3
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 154 W 650 V Continuous Drain Current (ID):19 A 39 nC
| Parameter | Value |
|---|---|
| Gate Charge | 39 nC |
| Gate to Source Threshold Voltage | 2.5 V |
| Continuous Drain Current (ID) | 19 A |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 165 mΩ |
| Input capacitance | 1.5 nF |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Power Dissipation | 154 W |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| Number of Channels | 1 |
| Packaging | Tube |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 541
Distributors
pcbx
pcbxUnit Price$2.52803
Ext.Price$2.52803
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.52803 | $2.52803 |
| 10 | $1.43286 | $14.32860 |
| 25 | $1.40318 | $35.07950 |
| 50 | $1.37412 | $68.70600 |
| 100 | $1.34566 | $134.56600 |
| 300 | $1.25498 | $376.49400 |
| 500 | $1.17040 | $585.20000 |
| 1000 | $1.12680 | $1126.80000 |